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55) The Magnitude Of Current I-(CBO)
Depends Largely Upon The Emitter Doping.
Depends Largely Upon The Emitter-base Junction Bias Potential.
Increases With The Increase In Temperature.
Is Generally Greater In Silicon Than In Germanium Transistor.
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This is Medium Level Question in English Language Posted By Sunil Saharan in Engineering --> Electrical Category (Viewed : 74 Times)
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